JPH0546709B2 - - Google Patents

Info

Publication number
JPH0546709B2
JPH0546709B2 JP60036197A JP3619785A JPH0546709B2 JP H0546709 B2 JPH0546709 B2 JP H0546709B2 JP 60036197 A JP60036197 A JP 60036197A JP 3619785 A JP3619785 A JP 3619785A JP H0546709 B2 JPH0546709 B2 JP H0546709B2
Authority
JP
Japan
Prior art keywords
amorphous silicon
semiconductor
type
ray
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60036197A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61196570A (ja
Inventor
Hidehiko Maehata
Hiroshi Kamata
Hiroyuki Daiku
Masahiko Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanadevia Corp
Original Assignee
Hitachi Shipbuilding and Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Shipbuilding and Engineering Co Ltd filed Critical Hitachi Shipbuilding and Engineering Co Ltd
Priority to JP60036197A priority Critical patent/JPS61196570A/ja
Publication of JPS61196570A publication Critical patent/JPS61196570A/ja
Publication of JPH0546709B2 publication Critical patent/JPH0546709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/36—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
    • G01T1/362—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry with scintillation detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP60036197A 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ Granted JPS61196570A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60036197A JPS61196570A (ja) 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60036197A JPS61196570A (ja) 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ

Publications (2)

Publication Number Publication Date
JPS61196570A JPS61196570A (ja) 1986-08-30
JPH0546709B2 true JPH0546709B2 (en]) 1993-07-14

Family

ID=12463001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60036197A Granted JPS61196570A (ja) 1985-02-25 1985-02-25 アモルフアスシリコンｘ線センサ

Country Status (1)

Country Link
JP (1) JPS61196570A (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2596419B2 (ja) * 1986-11-28 1997-04-02 京セラ株式会社 位置検出装置
EP0275446A1 (de) * 1986-12-19 1988-07-27 Heimann GmbH Röntgenstrahlendetektor
JPH0543429Y2 (en]) * 1988-03-14 1993-11-01
IL96561A0 (en) * 1989-12-28 1991-09-16 Minnesota Mining & Mfg Amorphous silicon sensor
CA2034118A1 (en) * 1990-02-09 1991-08-10 Nang Tri Tran Solid state radiation detector
JP2558403Y2 (ja) * 1996-06-28 1997-12-24 株式会社島津製作所 放射線検出器
JP4894921B2 (ja) * 2007-05-24 2012-03-14 コニカミノルタホールディングス株式会社 放射線検出器、放射線検出器の製造方法及び支持基板の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837702B2 (ja) * 1974-12-13 1983-08-18 株式会社日立製作所 ホウシヤセンコタイサツゾウソウチ
JPS59154082A (ja) * 1983-02-22 1984-09-03 Oki Electric Ind Co Ltd 光センサ

Also Published As

Publication number Publication date
JPS61196570A (ja) 1986-08-30

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